Datasheet > AOT2916L

AOT2916L

更新时间： 2024-09-30 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	351K
描述
100V N-Channel MOSFET

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AOT2916L 数据手册

AOT2916L/AOTF2916L

100V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT2916L & AOTF2916L uses trench MOSFET

technology that is uniquely optimized to provide the most

efficient high frequency switching performance. Both

conduction and switching power losses are minimized due

to an extremely low combination of R_DS(ON), Ciss and

Coss. This device is ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial

power supplies and LED backlighting.

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

23A / 17A

< 34mΩ

< 43.5mΩ

100% UIS Tested

100% R_gTested

Top View

TO-220

TO-220F

AOT2916L

AOTF2916L

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT2916L

AOTF2916L

Units

Drain-Source Voltage

V_DS

100

±20

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

41.5

20.5

23.5

11.5

P_D

T_A=25°C

2.1

1.3

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

AOT2916L

AOTF2916L

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

3.6

6.4

Rev 0 : Oct. 2012

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