AOT27S60/AOB27S60/AOTF27S60
600V 27A
α
MOS TM Power Transistor
General Description
fabricated using the advanced αMOSTM high voltage
The AOT27S60& AOB27S60 & AOTF27S60 have been
performance and robustness in switching applications.
guaranteed avalanche capability these parts can be
process that is designed to deliver high levels of
By providing low RDS(on), Qg and EOSS along with
designs.
adopted quickly into new and existing offline power supply
Features
VDS @ Tj,max
IDM
700V
110A
0.16Ω
26nC
6µJ
RDS(ON),max
Qg,typ
Eoss @ 400V
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT27S60/AOB27S60
AOTF27S60
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
V
VGS
±30
TC=25°C
27
17
27*
17*
Continuous Drain
Current
ID
TC=100°C
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
110
7.5
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
110
480
357
mJ
W
W/ oC
50
PD
Power Dissipation B
Derate above 25oC
2.9
100
20
0.4
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOT27S60/AOB27S60
AOTF27S60
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
--
°C/W
°C/W
Maximum Junction-to-Case
0.35
2.5
* Drain current limited by maximum junction temperature.
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