Datasheet > AOT298L

AOT298L

更新时间： 2024-09-30 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	383K
描述
100V N-Channel MOSFET

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AOT298L 数据手册

AOT298L/AOB298L/AOTF298L

100V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT298L & AOB298L & AOTF298L uses Trench

MOSFET technology that is uniquely optimized to provide

the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low

combination of R_DS(ON)and C_rss. In addition, switching

behavior is well controlled with a soft recovery body

diode.This device is ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial

power supplies and LED backlighting.

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

58A/33A

< 14.5mΩ

100% UIS Tested

100% R_gTested

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT298L

AOTF298L

AOB298L

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT298L/AOB298L

100

AOTF298L

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

I_D

I_DM

I_DSM

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

130

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.1

1.33

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

AOT298L/AOB298L

AOTF298L

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

4.5

Rev 0 : Oct. 2011

www.aosmd.com

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