Datasheet > AOT286L

AOT286L

更新时间： 2024-01-04 23:13:20

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	289K
描述
80V N-Channel MOSFET

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AOT286L 数据手册

AOT286L/AOB286L

80V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT286L/AOB286L uses Trench MOSFET

technology that is uniquely optimized to provide the most

efficient high frequency switching performance. Both

conduction and switching power losses are minimized

due to an extremely low combination of R_DS(ON), Ciss and

Coss. This device is ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial

power supplies and LED backlighting.

80V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

70A

< 6.0mΩ (< 5.7mΩ )

< 7.9mΩ (< 7.6mΩ )

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

245

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

10.5

I_AS

E_AS

125

T_C=25°C

Power Dissipation ^B

T_C=100°C

167

P_D

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.7

0.9

* Surface mount package TO263

Rev 0: Nev. 2012

www.aosmd.com

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