Datasheet > AOT262L

AOT262L

更新时间： 2024-02-19 13:53:49

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	251K
描述
60V N-Channel MOSFET

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AOT262L 数据手册

AOT262L/AOB262L

60V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT262L/AOB262L combines advanced trench

MOSFET technology with a low resistance package to

provide extremely low R_DS(ON).This device is ideal for

boost converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

60V

140A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 6V)

< 3.0mΩ (< 2.8mΩ^∗)

< 3.2mΩ (< 3.0mΩ^∗)

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain

Current ^G

Pulsed Drain Current ^C

T_C=25°C

140

I_D

T_C=100°C

110

I_DM

500

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AS, I_AR

115

Avalanche energy L=0.1mH ^C

E_AS, E_AR

661

T_C=25°C

Power Dissipation ^B

T_C=100°C

333

P_D

167

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.35

0.45

* Surface mount package TO263

Rev0 : Nov 2010

www.aosmd.com

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