AOT254L/AOB254L
150V N-Channel MOSFET
General Description
Product Summary
VDS
150V
The AOT254L/AOB254L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
32A
< 46mΩ
< 53mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
G
D
D
S
G
G
S
S
AOT254L
AOB254L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
150
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TC=25°C
32
Continuous Drain
Current
ID
TC=100°C
22.5
A
Pulsed Drain Current C
IDM
70
4.2
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
3.3
IAS
12
A
EAS
7
mJ
TC=25°C
Power Dissipation B
TC=100°C
125
62.5
2.1
PD
W
TA=25°C
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
48
60
RθJC
0.7
1.2
Rev 0 : March. 2011
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