Datasheet > AOT210L

AOT210L

更新时间： 2024-09-28 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	253K
描述
30V N-Channel MOSFET

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AOT210L 数据手册

AOT210L/AOB210L

30V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT210L/AOB210L uses Trench MOSFET

30V

105A

technology that is uniquely optimized to provide the most

efficient high frequency switching performance. Power

losses are minimized due to an extremely low combination

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

< 2.9mΩ (< 2.6mΩ^∗)

< 3.7mΩ (< 3.5mΩ^∗)

of R_DS(ON)and C_rss

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain

Current ^G

Pulsed Drain Current ^C

T_C=25°C

105

I_D

T_C=100°C

I_DM

400

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

231

176

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

1.9

P_DSM

Power Dissipation ^A

T_A=70°C

1.2

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.7

0.85

* Surface mount package TO263

Rev0 : Sep 2010

www.aosmd.com

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