AOT20N25

更新时间： 2024-02-26 08:18:53

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	295K
描述
250V,20A N-Channel MOSFET

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技术参数
数据手册

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AOT20N25 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.99
Is Samacsys：	N	Base Number Matches：	1

AOT20N25 数据手册

AOT20N25

250V,20A N-Channel MOSFET

General Description

Product Summary

V_DS

300V@150℃

20A

The AOT20N25 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this device can be

adopted quickly into new and existing offline power supply

designs.This device is ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial

power supplies and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.17Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT20N25L

Top View

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT20N25

Units

Drain-Source Voltage

Gate-Source Voltage

250

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

4.5

I_AS

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

E_AS

dv/dt

608

V/ns

W/ ^oC

208

P_D

Power Dissipation ^B

Derate above 25^oC

1.7

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOT20N25

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

0.6

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

Rev0: Oct 2011

www.aosmd.com

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