Datasheet > AOT13N50

AOT13N50

更新时间： 2024-02-24 17:26:37

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	475K
描述
500V, 13A N-Channel MOSFET

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技术参数
数据手册

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AOT13N50 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	2.32
配置：	Single	最大漏极电流 (Abs) (ID)：	13 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	250 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

AOT13N50 数据手册

AOT13N50/AOTF13N50

500V, 13A N-Channel MOSFET

General Description

The AOT13N50 & AOTF13N50 have been fabricated

using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

By providing low R_DS(on), C_issand C_rssalong with

robustness in popular AC-DC applications.

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

Features

V_DS

600V@150℃

13A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.51Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT13N50

AOTF13N50

Units

Drain-Source Voltage

Gate-Source Voltage

500

±30

V_GS

T_C=25°C

13*

Continuous Drain

Current

I_D

T_C=100°C

8.5

8.5*

Pulsed Drain Current ^C

I_DM

5.5

454

908

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

250

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOT13N50

AOTF13N50

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

2.5

* Drain current limited by maximum junction temperature.

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