Datasheet > AOT14N50FD

AOT14N50FD

更新时间： 2024-02-06 23:38:55

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	237K
描述
500V, 14A N-Channel MOSFET

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AOT14N50FD 数据手册

AOT14N50FD/AOTF14N50FD

500V, 14A N-Channel MOSFET

General Description

Product Summary

V_DS

600V@150℃

14A

The AOT14N50FD/AOTF14N50FD have been fabricated

using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

< 0.47Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT14N50FDL & AOTF14N50FDL

Top View

TO-220F

TO-220

AOT14N50FD

AOTF14N50FD

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT14N50FD

AOTF14N50FD

Units

Drain-Source Voltage

Gate-Source Voltage

500

±30

V_GS

T_C=25°C

14*

Continuous Drain

Current

I_D

T_C=100°C

9.6

9.6*

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

375

750

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

278

2.2

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOT14N50FD

AOTF14N50FD

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

0.45

2.5

* Drain current limited by maximum junction temperature.

Rev3: Jul 2011

www.aosmd.com

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