Datasheet > AOT1608L

AOT1608L

更新时间： 2024-02-01 21:58:05

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	421K
描述
60V N-Channel Rugged Planar MOSFET

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AOT1608L 数据手册

AOT1608L/AOB1608L

60V N-Channel Rugged Planar MOSFET

General Description

Product Summary

V_DS

60V

The AOT1608L/AOB1608L uses a robust technology that

is designed to provide efficient and reliable power

conversion even in the most demanding applications,

including motor control. With low R_DS(ON)and excellent

thermal capability this device is appropriate for high

current switching and can endure adverse operating

conditions.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

140A

< 7.6mΩ

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

140

Continuous Drain

Current ^G

I_D

T_C=100°C

100

Pulsed Drain Current ^C

I_DM

256

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

113

E_AS, E_AR

638

T_C=25°C

Power Dissipation ^B

T_C=100°C

333

P_D

166

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.35

0.45

Rev0: May 2011

www.aosmd.com

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