Datasheet > AOT15S65

AOT15S65

更新时间： 2024-01-23 07:54:32

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	308K
描述
650V 15A a MOS Power Transistor

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数据手册

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AOT15S65 数据手册

AOT15S65/AOB15S65/AOTF15S65

650V 15A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

R_DS(ON),max

Q_g,typ

750V

60A

The AOT15S65 & AOB15S65 & AOTF15S65 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

0.29Ω

17.2nC

3.6µJ

E_oss@ 400V

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT15S65L & AOB15S65L & AOTF15S65L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT15S65

AOTF15S65

AOB15S65

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT15S65/AOB15S65

AOTF15S65

AOTF15S65L

Units

Drain-Source Voltage

V_DS

650

±30

Gate-Source Voltage

V_GS

T_C=25°C

15*

10*

15*

10*

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

T_C=100°C

I_DM

I_AR

2.4

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

173

208

1.7

0.4

100

P_D

Power Dissipation ^B

Derate above 25^oC

0.3

W/ ^o

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^H

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT15S65/AOB15S65

AOTF15S65

AOTF15S65L

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

0.6

°C/W

Maximum Junction-to-Case

2.5

3.7

* Drain current limited by maximum junction temperature.

Rev1: Mar 2012

www.aosmd.com

Page 1 of 7

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