Datasheet > AOT12N60FD

AOT12N60FD

更新时间： 2024-09-27 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	525K
描述
600V, 12A N-Channel MOSFET

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AOT12N60FD 数据手册

AOT12N60FD/AOTF12N60FD

600V, 12A N-Channel MOSFET

General Description

TheꢀAOT12N60FD/AOTF12N60FDꢀhaveꢀbeenꢀfabricated usingꢀanꢀadvancedꢀhighꢀvoltageꢀMOSFETꢀprocessꢀthatꢀis

designedꢀtoꢀdeliverꢀhighꢀlevelsꢀofꢀperformanceꢀand robustnessꢀinꢀpopularꢀACꢁDCꢀapplications.

ByꢀprovidingꢀlowꢀR_DS(on),ꢀC_issꢀandꢀC_rssꢀalongꢀwith

guaranteedꢀavalancheꢀcapabilityꢀtheseꢀpartsꢀcanꢀbe

adoptedꢀquicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply

designs.

Features

ꢀꢀꢀV_DS

700V@150℃

ꢀꢀꢀI_Dꢀꢀ(atꢀV_GS=10V)

ꢀꢀꢀR_DS(ON)ꢀ(atꢀV_GS=10V)

12A

<ꢀ0.65Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT12N60FD

AOTF12N60FD

Units

DrainꢁSourceꢀVoltage

V_DS

600

±30

GateꢁSourceꢀVoltage

V_GS

T_C=25°C

12*

ContinuousꢀDrain

Current

I_D

T_C=100°C

PulsedꢀDrainꢀCurrentꢀ^C

AvalancheꢀCurrentꢀ^C

I_DM

I_AR

Repetitiveꢀavalancheꢀenergyꢀ^C

E_AR

E_AS

dv/dt

375

750

Singleꢀpulsedꢀavalancheꢀenergyꢀ^G

Peakꢀdiodeꢀrecoveryꢀdv/dt

T_C=25°C

V/ns

W/ꢀ^oC

278

2.2

P_D

PowerꢀDissipationꢀ^B

Derateꢀaboveꢀ25^oC

0.4

JunctionꢀandꢀStorageꢀTemperatureꢀRange

Maximumꢀleadꢀtemperatureꢀforꢀsoldering

purpose,ꢀ1/8"ꢀfromꢀcaseꢀforꢀ5ꢀseconds

Thermal Characteristics

T_J,ꢀT_STG

T_L

ꢁ55ꢀtoꢀ150

300

°C

Parameter

Symbol

R_θJA

AOT12N60FD

AOTF12N60FD

Units

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A,D

°C/W

MaximumꢀCaseꢁtoꢁsinkꢀ^A

R_θCS

0.5

ꢁꢁ

°C/W

MaximumꢀJunctionꢁtoꢁCase

R_θJC

0.45

2.5

*ꢀDrainꢀcurrentꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperature.

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