Datasheet > AOI7N65

AOI7N65

更新时间： 2024-09-25 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	443K
描述
650V,7A N-Channel MOSFET

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AOI7N65 数据手册

AOD7N65/AOI7N65

650V,7A N-Channel MOSFET

General Description

The AOD7N65 & AOI7N65 have been fabricated using an

advanced high voltage MOSFET process that is designed

popular AC-DC applications.

to deliver high levels of performance and robustness in

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply designs.

Features

V_DS

750V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 1.56Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

650

Gate-Source Voltage

V_GS

±30

T_C=25°C

Continuous Drain

Current^B

I_D

T_C=100°C

4.3

Pulsed Drain Current ^C

I_DM

3.1

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

144

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

288

V/ns

W/ ^oC

178

P_D

Power Dissipation ^B

Derate above 25^oC

1.4

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

0.7

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

0.5

1/6

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