Datasheet > AOK20B120E1

AOK20B120E1

更新时间： 2024-09-25 14:47:43

品牌	Logo	应用领域
美国万代 - AOS		栅
页数	文件大小	规格书
8页	665K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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AOK20B120E1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	2.13
Base Number Matches：	1

AOK20B120E1 数据手册

AOK20B120E1

Alpha IGBT ^TMwith Diode

1200V, 20A

General Description

Product Summary

• Latest AlphaIGBT (α IGBT) technology

• Best in Class V_CE(SAT)enables high efficiencies

• Low turn-off switching loss due to fast turn-off time

• Very smooth turn-off current waveforms reduce EMI

• Better thermal management

V_CE

1200V

20A

I_C(T_C=100°C)

V_CE(sat)(T_C=25°C)

1.68V

• High surge current capability

• Minimal gate spike due to high input capacitance

Applications

• Induction Cooking

• Rice Cookers

• Microwave Ovens

• Other soft switching applications

Top View

TO-247

AOK20B120E1

Orderable Part Number

Package Type

Form

Tube

Minimum Order Quantity

AOK20B120E1

TO247

240

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOK20B120E1

Units

V _CE

Collector-Emitter Voltage

1200

V _GE

Gate-Emitter Voltage

±30

T_C=25°C

Continuous Collector

Current

I _C

T_C=100°C

I _Cpulse

I _CSM

I _LM

Pulsed Collector Current, Limited by T_Jmax

Non repetitive peak collector current^A

200

Turn off SOA, V_CE≤ 600V, Limited by T_Jmax

T_C=25°C

Continuous Diode

Forward Current

I _F

T_C=100°C

Diode Pulsed Current, Limited by T_Jmax

T_C=25°C

I _Fpulse

P _D

333

167

-55 to 175

°C

Power Dissipation

T_C=100°C

T _J, T _STG

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T _L

300

°C

Thermal Characteristics

Parameter

Symbol

R _{θ JA}

AOK20B120E1

Units

°C/W

Maximum Junction-to-Ambient

Maximum IGBT Junction-to-Case

Maximum Diode Junction-to-Case

R _{θ JC}

0.45

R _{θ JC}

1.6

°C/W

Note A: Capacitor charging saturation current limited by T_jmax<175°C and t_p<3µs

Rev.1.0: March 2015

www.aosmd.com

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