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AOK22N50 PDF预览

AOK22N50

更新时间: 2024-11-13 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 441K
描述
500V,22A N-Channel MOSFET

AOK22N50 数据手册

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AOK22N50  
500V,22A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
600V@150  
22A  
The AOK22N50 is fabricated using an advanced high  
voltage MOSFET process that is designed to deliver high  
levels of performance and robustness in popular AC-DC  
applications.By providing low RDS(on), Ciss and Crss along  
with guaranteed avalanche capability this parts can be  
adopted quickly into new and existing offline power supply  
designs.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 0.26  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOK22N50L  
Top View  
TO-247  
D
G
S
S
D
G
AOK22N50  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
AOK22N50  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
500  
±30  
22  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
15  
A
Pulsed Drain Current C  
IDM  
88  
7
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
735  
mJ  
Single plused avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
1470  
5
mJ  
V/ns  
W
W/ oC  
417  
PD  
Power Dissipation B  
Derate above 25oC  
3.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
RθJA  
AOK22N50  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,D  
Maximum Case-to-sink A  
40  
0.5  
0.3  
RθCS  
Maximum Junction-to-Case  
RθJC  
Rev0: Nov 2011  
www.aosmd.com  
Page 1 of 5  

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