Datasheet > AOI8N25

AOI8N25

更新时间： 2024-09-25 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	379K
描述
250V,8A N-Channel MOSFET

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AOI8N25 数据手册

AOD8N25/AOI8N25

250V,8A N-Channel MOSFET

General Description

Product Summary

The AOD8N25 & AOI8N25 have been fabricated using an

advanced high voltage MOSFET process that is designed

to deliver high levels of performance and robustness in

popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.These parts are ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial

power supplies and LED backlighting.

V_DS

300V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.56Ω

100% UIS Tested!

100% R_gTested!

TO252

DPAK

TO251A

IPAK

Top View

Bottom View

Top View

Bottom View

AOD8N25

AOI8N25

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

250

±30

V_GS

T_C=25°C

Continuous Drain

Current^B

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

2.1

I_AS

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

E_AS

dv/dt

132

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.63

-50 to 150

Junction and Storage Temperature Range

T_J, T_STG

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

1.6

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

1.3

Rev 1: Feb 2012

www.aosmd.com

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