Datasheet > AOK18N65

AOK18N65

更新时间： 2024-09-25 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	449K
描述
650V,18A N-Channel MOSFET

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AOK18N65 数据手册

AOK18N65

650V,18A N-Channel MOSFET

General Description

Product Summary

V_DS

750V@150℃

18A

The AOK18N65 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this part can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.39Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOK18N65L

Top View

TO-247

AOK18N65

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOK18N65

Units

Drain-Source Voltage

Gate-Source Voltage

650

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

6.3

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

595

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

1190

V/ns

W/ ^oC

417

P_D

Power Dissipation ^B

Derate above 25^oC

3.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

AOK18N65

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

Maximum Junction-to-Case

0.5

0.3

R_θCS

R_θJC

Rev0: Dec 2011

www.aosmd.com

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