AOD7S65/AOU7S65/AOI7S65
650V 7A
α
MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
IDM
750V
30A
The AOD7S65 & AOU7S65 & AOI7S65 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
RDS(ON),max
Qg,typ
0.65Ω
9.2nC
2µJ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO251A
IPAK
TO252
DPAK
TO251
D
Top View
Bottom View
Top View
Top View
Bottom View
Bottom View
D
D
G
S
G
S
S
G
G
D
D
S
D
D
G
S
G
S
G
S
AOI7S65
AOU7S65
AOD7S65
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
650
±30
7
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
5
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
30
1.7
43
86
89
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy H
TC=25°C
EAR
EAS
mJ
W
W/ oC
PD
Power Dissipation B
Derate above 25oC
0.7
100
20
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
V/ns
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
300
°C
Parameter
Symbol
Typical
Maximum
Units
Maximum Junction-to-Ambient A,D
RθJA
45
55
°C/W
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
RθJC
--
0.5
1.4
°C/W
°C/W
1.1
Rev1: Nov 2012
www.aosmd.com
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