Datasheet > AOI468

AOI468

更新时间： 2024-11-09 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	1525K
描述
300V,11.5A N-Channel MOSFET

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AOI468 数据手册

AOD468/AOI468

300V,11.5A N-Channel MOSFET

Genera^Gl^eD^nee^ras^lc^Dr^ei^sp^ct^rii^po^tin^on

The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed

popular AC-DC applications.By providing low R _DS(on)

, C_iss

to deliver high levels of performance and robustness in

parts can be adopted quickly into new and existing offline

and C_rssalong with guaranteed avalanche capability these

power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

Product Summary

350V@150℃

11.5A

V_DS

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

<0.42Ω

100% UIS Tested!

100% R_gTested!

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

300

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

Continuous Drain

Current^B

Pulsed Drain Current ^C

Avalanche Current ^C

T_C=25°C

11.5

I_D

T_C=100°C

8.3

I_DM

3.8

216

430

I_AR

Repetitive avalanche energy

Single pulsed avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

E_AR

E_AS

dv/dt

V/ns

150

P_D

Power Dissipation ^B

Derate above 25^oC

W/ C

-50 to 175

T_J, T_STG

T_L

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

°C

300

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,G

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

Symbol

R_θJA

Typical

Maximum

Units

°C/W

0.5

R_θCS

R_θJC

0.7

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