Datasheet > AOI4N60

AOI4N60

更新时间： 2024-11-25 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	539K
描述
600V,4A N-Channel MOSFET

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AOI4N60 数据手册

AOD4N60/AOI4N60/AOU4N60

600V,4A N-Channel MOSFET

General Description

Product Summary

The AOD4N60 & AOI4N60 & AOU4N60 have been

fabricated using an advanced high voltage MOSFET

process that is designed to deliver high levels of

performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

V_DS

700V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 2.3Ω

100% UIS Tested!

100% R_gTested!

TO252

DPAK

TO251A

IPAK

TO251

Top View

Bottom View

Top View

Bottom View

Top View

Bottom View

AOI4N60

AOU4N60

AOD4N60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

±30

T_C=25°C

Continuous Drain

Current^B

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

T_C=100°C

2.6

I_DM

I_AR

2.8

118

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^H

Peak diode recovery dv/dt

T_C=25°C

235

V/ns

W/ ^oC

104

P_D

Power Dissipation ^B

Derate above 25^oC

0.83

Junction and Storage Temperature Range

T_J, T_STG

T_L

-50 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A,G

°C/W

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

0.5

1.2

°C/W

R_θJC

Rev2: Jan 2012

www.aosmd.com

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AOI4N60 替代型号

型号	品牌	替代类型	描述	数据表
AOU4N60	AOS	类似代替	600V,4A N-Channel MOSFET
4N60L-TQ3-R	UTC	功能相似	4A, 600V N-CHANNEL POWER MOSFET

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