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AO4494 PDF预览

AO4494

更新时间: 2024-11-20 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 395K
描述
30V N-Channel MOSFET

AO4494 数据手册

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AO4494  
30V N-Channel MOSFET  
General Description  
technology with a low resistance package to provide  
The AO4494 combines advanced trench MOSFET  
extremely low R  
applications.  
DS(ON). This device is for PWM  
Features  
VDS (V) = 30V  
ID = 18A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON) < 6.5m  
RDS(ON) < 9.5mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
±20  
18  
V
V
VGS  
TC=25°C  
TC=70°C  
Continuous Drain  
Current  
ID  
14  
A
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
130  
32  
A
EAR  
51  
mJ  
TC=25°C  
3.1  
Power Dissipation B  
TC=70°C  
PD  
W
°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
28  
59  
Max  
40  
75  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Steady-State  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
RθJL  
16  
24  
www.freescale.net.cn  
1/6  

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