[1]
Absolute Maximum Ratings
[1]
Symbol
Parameters
Units
V
Value
6
Notes
V
d
Positive Supply Voltage
Gate Supply Voltage
2
V
g
V
-3 to 0.5
700
I
dq
Drain Current
mA
W
P
P
Power Dissipation
5.5
2, 3
2
D
CW Input Power
dBm
°C
23
in
T
Maximum Operating Channel Temp.
Storage Case Temp.
+155
-65 to +155
+260
4, 5
ch, max
T
stg
°C
T
max
Maximum Assembly Temp (20 sec max)
°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85 °C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
[6]
DC Specifications/ Physical Properties
Symbol
Parameters and Test Conditions
Units
mA
V
Value
650
I
dq
Drain Supply Current (Vd=5 V, Vg set for Id Typical)
V
g
Gate Supply Operating Voltage (Id(Q) = 650 (mA))
-1.1
[6]
R
Thermal Resistance (Channel-to-Base Plate)
°C/W
°C
16.8
θJC
T
ch
Channel Temperature
139.6
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this
condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.
[1, 2, 3, 4]
AMMP-6430 RF Specifications
T = 25°C, V = 5.0 V, I =650 mA, V = -1.1V, Z =50Ω
A
dd
dq
g
o
Symbol
Freq
Parameters and Test Conditions
Units
GHz
dB
Minimum
Typical
Maximum
Operational Frequency
27
16
26
32
[3, 4]
Gain
Small-signal Gain Freq = 27 GHz
20
27
35
10
10
43
[3]
P
-1dB
Output Power at 1dB Gain Compression
dBm
dBm
dB
OIP3
Output Third Order Intercept Point
Input Return Loss
RL
in
RL
out
Output Return Loss
dB
Isolation
Reverse Isolation
dB
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4-mm connecter based evaluation board at TA = 25°C.
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies
3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or power matching.
4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=27, 30, and 32GHz
5. The Gain and P1dB tested at 27GHz guaranteed with measurement accuracy 1.5 dB for gain and 1.6dB for P1dB.
2