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AMMP-6530-BLK PDF预览

AMMP-6530-BLK

更新时间: 2024-11-18 03:18:43
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频混频器微波混频器
页数 文件大小 规格书
10页 255K
描述
5-30 GHz Image Reject Mixer

AMMP-6530-BLK 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.73
JESD-609代码:e0安装特点:SURFACE MOUNT
端子数量:8封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC8,.2SQ,28子类别:RF/Microwave Mixers
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

AMMP-6530-BLK 数据手册

 浏览型号AMMP-6530-BLK的Datasheet PDF文件第2页浏览型号AMMP-6530-BLK的Datasheet PDF文件第3页浏览型号AMMP-6530-BLK的Datasheet PDF文件第4页浏览型号AMMP-6530-BLK的Datasheet PDF文件第5页浏览型号AMMP-6530-BLK的Datasheet PDF文件第6页浏览型号AMMP-6530-BLK的Datasheet PDF文件第7页 
Agilent AMMP-6530  
5–30 GHz Image Reject Mixer  
Data Sheet  
Features  
5x5 mm Surface Mount Package  
Broad Band Performance 530 GHz  
Low Conversion Loss of 8 dB  
High Image Rejection of 1520 dB  
Good 3rd Order Intercept of  
+18 dBm  
Description  
8
Single -1V, no current Supply Bias  
Agilent’s AMMP-6530 is an image  
reject mixer that operates from  
5 GHz to 30 GHz. The cold  
RF  
IF1  
NC  
IF2  
NC  
Vg  
1
2
3
7
6
5
Applications  
Microwave Radio Systems  
channel FET mixer is designed to  
be an easy-to-use component for  
any surface mount PCB applica-  
tion. It can be used drain pumped  
for low conversion loss applica-  
tions, or when gate pumped the  
mixer can provide high linearity  
for SSB up-conversion. An  
external 90-degree hybrid is used  
to achieve image rejection and a  
-1V voltage reference is needed.  
Intended applications include  
microwave radios, 802.16, VSAT,  
and satellite receivers. Since this  
one mixer can cover several  
bands, the AMMP-6530 can  
Satellite VSAT, DBS Up/Down Link  
LMDS & Pt-Pt mmW Long Haul  
NC  
Broadband Wireless Access  
(including 802.16 and 802.20  
WiMax)  
gate  
4
Top view  
package base: GND  
Pin  
1
Function  
WLL and MMDS loops  
IF1  
Commercial grade military  
2
3
IF2  
LO  
4
5
6
Vg  
RF  
7
8
reduce part inventory. The  
Absolute Maximum Ratings[1]  
integrated mixer eliminates  
complex tuning and assembly  
processes typically required by  
hybrid (discrete-FET or diode)  
mixers. The package is fully SMT  
compatible with backside ground-  
ing and I/O to simplify assembly.  
Symbol  
Parameters/Conditions  
Units  
Min.  
Max.  
Vg  
Gate Supply Voltage  
V
0
-3  
Pin  
CW Input Power  
dBm  
°C  
15  
Tch  
Operating Channel Temperature  
Storage Case Temperature  
Max. Assembly Temp (60 sec max)  
+150  
+150  
+300  
Tstg  
Tmax  
Note:  
°C  
-65  
°C  
1. Operation in excess of any one of these conditions may result in permanent damage to this device.  
Attention: Observe precautions for handling electrostatic sensitive devices.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.  

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