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AM82731-003 PDF预览

AM82731-003

更新时间: 2024-11-19 22:35:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管微波雷达放大器局域网
页数 文件大小 规格书
4页 64K
描述
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM82731-003 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.09Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):0.9 A配置:SINGLE
最小直流电流增益 (hFE):10最高频带:S BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2最高工作温度:250 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):23 W最小功率增益 (Gp):5.7 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AM82731-003 数据手册

 浏览型号AM82731-003的Datasheet PDF文件第2页浏览型号AM82731-003的Datasheet PDF文件第3页浏览型号AM82731-003的Datasheet PDF文件第4页 
AM82731-003  
RF & MICROWAVE TRANSISTORS  
S-BAND RADAR APPLICATIONS  
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.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
10:1 VSWR CAPABILITY  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT IMPEDANCE MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
POUT = 3.0 W. MIN. WITH 5.7 dB GAIN  
.400 x .400 2NLFL (S042)  
hermeticaly sealed  
BANDWIDTH  
400 MHz  
=
BRANDING  
82731-3  
ORDER CODE  
AM 82731-003  
PIN CONNECTION  
DESCRIPTION  
The AM82731-003 device is a medium power silicon  
bipolar NPN transistor specifically designed for S-  
Band radar pulsed driver applications.  
This device is capable of operation over a wide range  
of pulse widths, duty cycles, and temperatures and  
can withstand a 10:1 output VSWR. Low RF thermal  
resistance, refractory/gold metallization, and auto-  
matic wire bonding techniques ensure high reliability  
and product consistency.  
The AM82731-003 is supplied in the hermetic met-  
al/ceramic package with internal input/output imped-  
ance matching circuitry, and is intended for military  
and other high reliability applications.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C)  
case  
Symbol  
Parameter  
Value  
Unit  
PDISS  
Power Dissipation*  
Device Current*  
(TC 100°C)  
23  
W
A
IC  
VCC  
TJ  
0.9  
34  
Collector-Supply Voltage*  
V
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
°C  
°C  
TSTG  
65 to +200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
6.5  
°C/W  
*Applies only to rated RF amplifier operation  
1/4  
August 1992  

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