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AM82731-050 PDF预览

AM82731-050

更新时间: 2024-11-18 08:28:31
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 77K
描述
NPN RF POWER TRANSISTOR

AM82731-050 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.65Is Samacsys:N
外壳连接:EMITTER最大集电极电流 (IC):4 A
配置:SINGLE最小直流电流增益 (hFE):30
最高频带:S BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:250 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

AM82731-050 数据手册

  
AM82731-050  
NPN RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE 400 2L FLG  
The AM82731-050 is a Common  
Base Device Designed for Pulsed S-  
Band Pulse output and driver  
Applications.  
FEATURES INCLUDE:  
Input/Output Matching  
Gold Metallization  
Emitter Ballasting  
MAXIMUM RATINGS  
4.0 A  
46 V  
IC  
VCC  
PDISS  
TJ  
100 W @ TC 50 °C  
-65 °C to+250 °C  
-65 °C to+200 °C  
2.0 °C/W  
TSTG  
θJC  
1 = COLLECTOR  
2 & 4 = BASE  
3 = EMITTER  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 15 mA  
IC = 15 mA  
IE = 2.0 mA  
VCE = 40 V  
VCE = 5 V  
55  
V
BVCER  
BVEBO  
ICES  
RBE = 10  
55  
V
3.5  
V
10  
mA  
---  
hFE  
IC = 1.5 A  
30  
56  
35  
6.5  
POUT  
50  
30  
6.0  
W
%
dB  
VCC = 40 V  
PIN = 12.5 W  
f = 2.7 to 3.1 GHz  
ηC  
PG  
Note: Pulse Width = 100 μS  
Duty Cycle = 10%  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV.  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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