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AM29LV065MU90REI PDF预览

AM29LV065MU90REI

更新时间: 2024-11-07 22:18:35
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
11页 495K
描述
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

AM29LV065MU90REI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.4最长访问时间:90 ns
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:128
端子数量:48字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:64K子类别:Flash Memories
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

AM29LV065MU90REI 数据手册

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ADVANCE INFORMATION  
Am29LV065M  
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only  
Uniform Sector Flash Memory with VersatileI/O Control  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
8-byte read page buffer  
32-byte write buffer  
Single power supply operation  
3 volt read, erase, and program operations  
Low power consumption (typical values at 3.0 V,  
5 MHz)  
Enhanced VersatileI/O control  
30 mA typical active read current  
50 mA typical erase/program current  
1 µA typical standby mode current  
Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin; operates from 1.65 to 3.6 V  
Package options  
48-pin TSOP  
Manufactured on 0.23 µm MirrorBit process  
technology  
63-ball FBGA  
SecSi (Secured Silicon) Sector region  
256-byte sector for permanent, secure identification  
through an 16-byte random Electronic Serial Number,  
accessible through a command sequence  
SOFTWARE & HARDWARE FEATURES  
Software features  
Program Suspend & Resume: read other sectors  
May be programmed and locked at the factory or by  
before programming operation is completed  
the customer  
Erase Suspend & Resume: read/program other  
Flexible sector architecture  
sectors before an erase operation is completed  
One hundred twenty-eight 64 Kbyte sectors  
Data# polling & toggle bits provide status  
Compatibility with JEDEC standards  
Unlock Bypass Program command reduces overall  
multiple-byte programming time  
Provides pinout and software compatibility for  
single-power supply flash, and superior inadvertent  
write protection  
CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
Minimum 100,000 erase cycle guarantee per sector  
20-year data retention at 125°C  
Hardware features  
Sector Group Protection: hardware method of  
preventing write operations within a sector group  
PERFORMANCE CHARACTERISTICS  
High performance  
Temporary Sector Unprotect: VID-level method of  
changing code in locked sectors  
90 ns access time  
ACC (high voltage) pin accelerates programming  
25 ns page read times  
time for higher throughput during system production  
0.4 s typical sector erase time  
Hardware reset pin (RESET#) resets device  
3.0 µs typical write buffer byte programming time:  
32-byte write buffer reduces overall programming  
time for multiple-byte updates  
Ready/Busy# pin (RY/BY#) detects program or erase  
cycle completion  
Publication# 25262  
Issue Date: October 3, 2001  
Rev: A Amendment/+1  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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