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AM2300E3SR PDF预览

AM2300E3SR

更新时间: 2024-10-31 01:15:31
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 563K
描述
MOSFET N-CHANNEL ENHANCEMENT MODE

AM2300E3SR 数据手册

 浏览型号AM2300E3SR的Datasheet PDF文件第2页浏览型号AM2300E3SR的Datasheet PDF文件第3页浏览型号AM2300E3SR的Datasheet PDF文件第4页浏览型号AM2300E3SR的Datasheet PDF文件第5页浏览型号AM2300E3SR的Datasheet PDF文件第6页浏览型号AM2300E3SR的Datasheet PDF文件第7页 
AiT Semiconductor Inc.  
AM2300  
www.ait-ic.com  
MOSFET  
N-CHANNEL ENHANCEMENT MODE  
DESCRIPTION  
FEATURES  
AM2300 is the N-Channel enhancement mode  
power field effect transistors are using trench DMOS  
technology. This advanced trench technology  
devices are well suited for high efficiency fast  
switching applications, low in-line power loss are  
needed in small outline surface mount package.  
VDS = 20V, ID = 5A  
RDS(ON) = 22mΩ(typ.)@VGS = 4.5V  
RDS(ON) = 25mΩ(typ.)@VGS = 2.5V  
RDS(ON) = 30mΩ(typ.)@VGS = 1.8V  
Fast switch  
1.8V Low gate drive applications  
High power and current handling capability  
Available in SOT-23S Package  
AM2300 is available in SOT-23S package.  
ORDERING INFORMATION  
APPLICATION  
Hand-Held Instruments  
Load Switch  
Package Type  
Part Number  
AM2300E3SR  
SOT-23S  
E3S  
SPQ: 3,000pcs/Reel  
AM2300E3SVR  
V: Halogen free Package  
R: Tape & Reel  
Note  
PIN CONFIGURATION  
AiT provides all RoHS free products  
REV2.0  
- JUN 2010 RELEASED, JAN 2019 UPDATED -  
- 1 -  

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