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AM2303E3VR PDF预览

AM2303E3VR

更新时间: 2024-10-31 01:14:35
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 352K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

AM2303E3VR 数据手册

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AM2303  
MOSFET  
AiT Semiconductor Inc.  
www.ait-ic.com  
-30V P-CHANNEL ENHANCEMENT MODE  
DESCRIPTION  
FEATURES  
The AM2303 is the P-Channel logic enhancement  
mode power field effect transistor is produced using  
high cell density. advanced trench technology to  
provide excellent RDS(ON) low gate charge and  
operation gate as 2.5V.  
-30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V  
-30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V  
-30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V  
Super high density cell design for extremely low  
RDS(ON)  
Exceptional on-resistance and Maximum DC  
current capability  
This device is suitable for use as a load switch or  
other general applications.  
Available in SOT-23 Package  
The AM3401 is available in SOT-23 Package  
ORDERING INFORMATION  
APPLICATIONS  
High Frequency Point-of-Load Synchronous  
Buck Converter for MB/NB/UMPC/VGA  
DC/DC Converter  
Package Type  
SOT-23  
Part Number  
AM2303E3R  
E3  
Load Switch  
AM2303E3VR  
V: Halogen free Package  
R: Tape & Reel  
Note  
P CHANNEL MOSFET  
AiT provides all RoHS products  
Suffix “ V “ means Halogen free Package  
REV1.2  
-MAR 2011 RELEASED, JUN 2012 UPDATED -  
- 1 -  

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