Datasheet > AM2306NE

AM2306NE

更新时间： 2024-09-15 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	214K
描述
N-Channel 30-V (D-S) MOSFET

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AM2306NE 数据手册

Analog Power

AM2306NE

N-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

3.5

3.0

58 @ V_GS= 10V

82 @ V_GS= 4.5V

SOT-23

Top View

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SOT-23 Surface Mount Package

Saves Board Space

•

High power and current handling capability

applications

^{Low side high current DC-DC Converter}ESD Protecte^Sd

2000V

N-Channel

MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

V_GS

Limit

±20

3.5

2.8

1.25

1.3

0.8

Units

Drain-Source Voltage

Gate-Source Voltage

T_A=25^oC

T_A=70^oC

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

^oC/W

100

t <= 10 sec

Steady-State

Maximum Junction-to-Ambient^a

166

^oC/W

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM2306E_A

PRELIMINARY

12 3 4 5

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