Datasheet > AM2307PE

AM2307PE

更新时间： 2024-09-15 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	350K
描述
P-Channel 20-V (D-S) MOSFET

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AM2307PE 数据手册

Analog Power

AM2307PE

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

r_DS(on)(mΩ)

VDS (V)

-20

ID(A)

-5.2

-4.4

-3.9

-3.2

31 @ V_GS= -4.5V

44 @ V_GS= -2.5V

56 @ V_GS= -1.8V

83 @ V_GS= -1.5V

Key Features:

• Low r_DS(on)trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Limit

-20

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±10

T_A=25°C

T_A=70°C

-5.2

Continuous Drain Current ^a

Pulsed Drain Current ^b

Continuous Source Current (Diode Conduction) ^a

I_D

-4.3

I_DM

I_S

-20

-1.9

T_A=25°C

T_A=70°C

1.3

Power Dissipation ^a

P_D

°C

0.8

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 10 sec

Steady State

100

Maximum Junction-to-Ambient ^a

°C/W

R_θJA

166

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

c Preliminary

Publication Order Number:

DS_AM2307PE_1B

12 3 4 5

中文翻译

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