Datasheet > AM2302E3SR

AM2302E3SR

更新时间： 2024-11-02 01:14:35

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
9页	1138K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AM2302E3SR 数据手册

AiT Semiconductor Inc.

AM2302

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM2302 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection or in

other Switching application.



V_DS=20V,I_D=2.9A

R_DS(ON)<59mΩ @ V_GS=2.5V

R_DS(ON)<45mΩ @ V_GS=4.5V

High Power and current handing capability

Surface Mount Package



Available in a SOT-23S package.

AM2302 is available in a SOT-23S package.

ORDERING INFORMATION

APPLICATION



Battery protection

Load switch

Package Type

Part Number

AM2302E3SR

AM2302E3SVR

Power management

SOT-23S

E3S

SPQ: 3,000pcs/Reel

PIN DESCRIPTION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Schematic diagram

REV1.1

- FEB 2019 RELEASED, FEB 2019 UPDATED -

- 1 -

12 3 4 5 6 7...9

中文翻译

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