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AM0912-080 PDF预览

AM0912-080

更新时间: 2024-11-04 22:05:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波晶体管电子放大器航空局域网
页数 文件大小 规格书
3页 68K
描述
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM0912-080 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.3Is Samacsys:N
外壳连接:BASE最大集电极电流 (IC):7 A
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:250 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):220 W
最小功率增益 (Gp):8.4 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AM0912-080 数据手册

 浏览型号AM0912-080的Datasheet PDF文件第2页浏览型号AM0912-080的Datasheet PDF文件第3页 
AM0912-080  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
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REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
.400 x .400 2NLFL (S042)  
POUT  
90 W MIN. WITH 13 dB GAIN  
=
hermetically sealed  
BANDWIDTH 225 MHz  
ORDER CODE  
BRANDING  
0912-80  
AM0912-080  
PIN CONNECTION  
DESCRIPTION  
The AM0912-080 Avionics power transistor is a  
broadband, high peak pulse power device speci-  
fically designed for avionics applications requiring  
broad bandwidth with moderate duty cycle and  
pulse width constraints such as ground/ship based  
DME/TACAN.  
This device is also designed for specialized ap-  
plications including JTIDS where reduced power  
provided under pulse formats utilizing short pulse  
widths and high burst or overall duty cycles.  
The AM0912-080 is housed in the unique  
AMPAC™ Hermetic Metal/Ceramic package with  
internal Input/Output matching structures.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
220  
7.0  
Unit  
Power Dissipation*  
Device Current*  
(TC 100˚C)  
W
A
VCC  
TJ  
Collector-Supply Voltage*  
50  
V
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
°
TSTG  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
0.80  
*Applies only to rated RF amplifier operation  
1/3  
September 1992  

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