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AM0912-150 PDF预览

AM0912-150

更新时间: 2024-11-04 22:05:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波射频双极晶体管电子放大器航空局域网
页数 文件大小 规格书
6页 108K
描述
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM0912-150 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.3Is Samacsys:N
外壳连接:BASE最大集电极电流 (IC):16.5 A
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:250 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):300 W
最小功率增益 (Gp):7.5 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AM0912-150 数据手册

 浏览型号AM0912-150的Datasheet PDF文件第2页浏览型号AM0912-150的Datasheet PDF文件第3页浏览型号AM0912-150的Datasheet PDF文件第4页浏览型号AM0912-150的Datasheet PDF文件第5页浏览型号AM0912-150的Datasheet PDF文件第6页 
AM0912-150  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
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REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
POUT = 150 W MIN. WITH 7.5 dB GAIN  
BANDWIDTH = 255MHz  
.400 x .500 2LFL (S038)  
hermetically sealed  
ORDER CODE  
BRANDING  
0912-150  
AM0912-150  
PIN CONNECTION  
DESCRIPTION  
The AM0912-150 is designed for specialized  
avionics applications including Mode-S, TCAS and  
JTIDS, where power is provided under pulse for-  
mats utilizing short pulse widths and high burst  
or overall duty cycles.  
The AM0912-150 is housed in the unique BIG-  
PAC Hermetic Metal/Ceramic package with in-  
ternal Input/Output matching structures.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
300  
16.5  
35  
Unit  
Power Dissipation*  
Device Current*  
(TC 100°C)  
W
A
VCC  
TJ  
Collector-Supply Voltage*  
V
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
°
TSTG  
65 to +200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance*  
0.57  
°C/W  
*Applies only to rated RF amplifier operation  
September 1992  
1/6  

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