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ALD114804APC

更新时间: 2024-11-30 08:24:27
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描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY

ALD114804APC 技术参数

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ALD114804APC 数据手册

 浏览型号ALD114804APC的Datasheet PDF文件第2页 
TM  
ADVANCED  
LINEAR  
®
e
EPAD  
A
DEVICES, INC.  
ALD114804/ALD114804A/ALD114904/ALD114904A  
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®  
MATCHED PAIR MOSFET ARRAY  
V
= -0.4V  
GS(th)  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-  
Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS  
technology. These devices are intended for low voltage, small signal applica-  
tions. They are excellent functional replacements for normally-closed relay appli-  
cations, as they are normally on (conducting) without any power applied, but  
could be turned off or modulated when system power supply is turned on. These  
MOSFETS have the unique characteristics of, when the gate is grounded, oper-  
ating in the resistance mode for low drain voltage levels and in the current source  
mode for higher voltage levels and providing a constant drain current.  
• Functional replacement of Form B (NC) relays  
• Ultra low power (nanowatt) analog and digital  
circuits  
• Ultra low operating voltage (<0.2V) analog and  
digital circuits  
• Sub-threshold biased and operated circuits  
• Zero power fail safe circuits in alarm systems  
• Backup battery circuits  
• Power failure and fail safe detector  
• Source followers and high impedance buffers  
• Precision current mirrors and current sources  
• Capacitives probes and sensor interfaces  
• Charge detectors and charge integrators  
• Differential amplifier input stage  
• High side switches  
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for  
exceptional device electrical characteristics matching. As these devices are on  
the same monolithic chip, they also exhibit excellent temperature tracking char-  
acteristics. They are versatile as design components for a broad range of analog  
applications, such as basic building blocks for current sources, differential ampli-  
fier input stages, transmission gates, and multiplexer applications.  
• Peak detectors and level shifters  
• Sample and Hold  
• Current multipliers  
• Discrete analog switches and multiplexers  
• Discrete voltage comparators  
Besides matched pair electrical characteristics, each individual MOSFET also  
exhibits well controlled parameters, enabling the user to depend on tight design  
limits corresponding to well matched characteristics.  
These depletion mode devices are built for minimum offset voltage and differen-  
tial thermal response, and they are suitable for switching and amplifying applica-  
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems  
where low input bias current, low input capacitance and fast switching speed are  
desired. These devices exhibit well controlled turn-off and sub-threshold  
charactersitics and therefore can be used in designs that depend on sub-thresh-  
old characteristics.  
PIN CONFIGURATION  
ALD114804  
-
-
V
V
1
2
3
4
5
6
7
8
N/C*  
16  
15  
14  
13  
12  
11  
10  
9
N/C*  
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in  
precision applications which require very high current gain, beta, such as current  
mirrors and current sources. A sample calculation of the DC current gain at a  
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is  
recommended that the user, for most applications, connect V+ pin to the most  
positive voltage potential (or left open unused) and V- and N/C pins to the most  
negative voltage potential in the system. All other pins must have voltages within  
these voltage limits.  
G
G
N2  
N1  
M 2  
M 1  
D
N1  
D
N2  
+
+
V
V
S
12  
-
-
V
S
V
34  
D
N3  
D
N4  
N4  
M 4  
M 3  
FEATURES  
G
G
N3  
• Depletion mode (normally ON)  
• Precision Gate Threshold Voltages: -0.4V +/- 0.02V  
N/C*  
N/C*  
-
-
V
V
• Nominal R  
V
=0.0V of 5.4KΩ  
DS(ON) @ GS  
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
PC, SC PACKAGES  
• V  
match (V ) — 20mV  
OS  
GS(th)  
• High input impedance — 1012typical  
ALD114904  
V
• Positive, zero, and negative V  
temperature coefficient  
GS(th)  
-
-
V
• DC current gain >108  
1
8
N/C*  
N/C*  
• Low input and output leakage currents  
G
D
G
D
2
3
4
7
6
5
N2  
N1  
ORDERING INFORMATION  
M 1  
M 2  
N1  
N2  
-
Operating Temperature Range*  
0°C to +70°C 0°C to +70°C  
8-Pin  
-
S
V
V
12  
16-Pin  
16-Pin  
SOIC  
8-Pin  
SOIC  
PA, SA PACKAGES  
Plastic Dip  
Plastic Dip  
Package  
Package  
Package  
Package  
*N/C pins are internally connected.  
Connect to V- to reduce noise  
ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA  
ALD114804 PC ALD114804SC ALD114904PA ALD114904SA  
* Contact factory for industrial temp. range or user-specified threshold voltage values  
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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