5秒后页面跳转
ALD114813SC PDF预览

ALD114813SC

更新时间: 2024-09-30 08:24:27
品牌 Logo 应用领域
先进线性 - ALD /
页数 文件大小 规格书
2页 419K
描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

ALD114813SC 数据手册

 浏览型号ALD114813SC的Datasheet PDF文件第2页 
TM  
ADVANCED  
LINEAR  
®
e
EPAD  
A
DEVICES, INC.  
ALD114813/ALD114913  
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®  
MATCHED PAIR MOSFET ARRAYS  
V
= -1.3V  
GS(th)  
APPLICATIONS  
GENERAL DESCRIPTION  
• Functional replacement of Form B (NC) relay  
• Zero power fail safe circuits  
• Backup battery circuits  
• Power failure detector  
• Fail safe signal detector  
• Source followers and buffers  
• Precision current mirrors  
• Precision current sources  
• Capacitives probes  
ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched  
at the factory using ALD’s proven EPAD CMOS technology. These devices are  
intended for low voltage, small signal applications. They are excellent functional  
replacements for normally-closed relay applications, as they are normally on (con-  
ducting) without any power applied, but could be turned off or modulated when  
system power supply is turned on. These MOSFETS have the unique character-  
istics of, when the gate is grounded, operating in the resistance mode for low  
drain voltage levels and in the current source mode for higher voltage levels and  
providing a constant drain current.  
• Sensor interfaces  
• Charge detectors  
• Charge integrators  
• Differential amplifier input stage  
• High side switches  
• Peak detectors  
• Sample and Hold  
• Alarm systems  
• Current multipliers  
• Analog switches  
These MOSFETS are designed for exceptional device electrical characteristics  
matching. As these devices are on the same monolithic chip, they also exhibit  
excellent temperature tracking characteristics. They are versatile as design com-  
ponents for a broad range of analog applications, and they are basic building  
blocks for current sources, differential amplifier input stages, transmission gates,  
and multiplexer applications. Besides matched pair electrical characteristics, each  
individual MOSFET also exhibits well controlled parameters, enabling the user to  
depend on tight design limits. Even units from different batches and different date  
of manufacture have correspondingly well matched characteristics.  
• Analog multiplexers  
• Voltage comparators  
• Level shifters  
These depletion mode devices are built for minimum offset voltage and differen-  
tial thermal response, and they are designed for switching and amplifying appli-  
cations in single 1.5V to +/-5V systems where low input bias current, low input  
capacitance and fast switching speed are desired. These devices exhibit well  
controlled turn-off and sub-threshold charactersitics and therefore can be used in  
designs that depend on sub-threshold characteristics.  
PIN CONFIGURATION  
ALD114813  
-
-
The ALD114813/ALD114913 are suitable for use in precision applications which  
require very high current gain, beta, such as current mirrors and current sources.  
A sample calculation of the DC current gain at a drain current of 3mA and gate  
input leakage current of 30pA= 100,000,000. It is recommended that the user, for  
most applications, connect V+ pin to the most positive voltage potential (or left  
open unused) and V- and N/C pins to the most negative voltage potential in the  
system. All other pins must have voltages within these voltage limits.  
V
V
1
2
3
4
5
6
7
8
N/C*  
16  
15  
14  
13  
12  
11  
10  
9
N/C*  
G
N2  
G
N1  
M 2  
M 1  
D
D
N1  
N2  
+
+
V
V
S
12  
-
-
V
S
V
34  
FEATURES  
D
D
N3  
N4  
N4  
M 4  
M 3  
• Depletion mode (normally ON) without power  
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V  
G
G
N3  
N/C*  
N/C*  
-
-
• Nominal R  
@V =0.0V of 1.3KΩ  
DS(ON)  
GS  
V
V
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
PC, SC PACKAGES  
ALD114913  
• V  
match (V ) — 20mV  
OS  
GS(th)  
• High input impedance — 1012typical  
• Positive, zero, and negative V  
temperature coefficient  
GS(th)  
• DC current gain >108  
-
-
V
V
1
2
3
4
8
7
6
5
N/C*  
N/C*  
• Low input and output leakage currents  
G
N2  
G
N1  
ORDERING INFORMATION  
M 1  
M 2  
D
N1  
D
N2  
Operating Temperature Range*  
0°C to +70°C 0°C to +70°C  
-
-
S
12  
V
V
16-Pin  
Plastic Dip  
Package  
16-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
PA, SA PACKAGES  
*N/C pins are internally connected.  
Connect to V- to reduce noise  
ALD114813PC ALD114813SC ALD114913PA  
ALD114913SA  
* Contact factory for industrial temp. range or user-specified threshold voltage values  
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

与ALD114813SC相关器件

型号 品牌 获取价格 描述 数据表
ALD114813SCL ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114835 ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114835PC ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114835PCL ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114835SC ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114835SCL ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114904 ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904A ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904APA ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904APAL ALD

获取价格

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY