Datasheet > ALD114835PC

ALD114835PC

更新时间： 2024-02-26 00:22:12

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
2页	39K
描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

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ALD114835PC 技术参数

是否无铅：	含铅	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	Base Number Matches：	1

ALD114835PC 数据手册

ADVANCED

LINEAR

EPAD

DEVICES, INC.

ALD114835/ALD114935

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

MATCHED PAIR MOSFET ARRAYS

= -3.5V

GS(th)

GENERAL DESCRIPTION

APPLICATIONS

ALD114835/ALD114935 are monolithic quad/dual N-Channel MOSFETs

matched at the factory using ALD’s proven EPAD CMOS technology. These

devices are intended for low voltage, small signal applications. They are excel-

lent functional replacements for normally-closed relay applications, as they are

normally on (conducting) without any power applied, but could be turned off or

modulated when system power supply is turned on. These MOSFETs have the

unique characteristics of, when the gate is grounded, operating in the resis-

tance mode for low drain voltage levels and in the current source mode for

higher voltage levels and providing a constant drain current.

• Functional replacement of Form B (NC) relay

• Zero power fail safe circuits

• Backup battery circuits

• Power failure detector

• Fail safe signal detector

• Source followers and buffers

• Precision current mirrors

• Precision current sources

• Capacitives probes

• Sensor interfaces

ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-

trical characteristics matching. As these devices are on the same monolithic

chip, they also exhibit excellent temperature tracking characteristics. They are

versatile as design components for a broad range of analog applications such

as basic building blocks for current sources, differential amplifier input stages,

transmission gates, and multiplexer applications. Besides matched pair electri-

cal characteristics, each individual MOSFET also exhibits well controlled pa-

rameters, enabling the user to depend on tight design limits. Even units from

different batches and different date of manufacture have correspondingly well

matched characteristics.

• Charge detectors

• Charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors

• Sample and Hold

• Alarm systems

• Current multipliers

• Analog switches

• Analog multiplexers

• Voltage comparators

• Level shifters

These depletion mode devices are built for minimum offset voltage and differ-

ential thermal response, and they are designed for switching and amplifying

applications in single 5V to +/-5V systems where low input bias current, low

input capacitance and fast switching speed are desired. These devices exhibit

well controlled turn-off and sub-threshold charactersitics and therefore can be

used in designs that depend on sub-threshold characteristics.

PIN CONFIGURATION

ALD114835

N/C*

TheALD114835/ALD114935 are suitable for use in precision applications which

require very high current gain, beta, such as current mirrors and current sources.

A sample calculation of the DC current gain at a drain current of 3mA and gate

input leakage current of 30pA = 100,000,000. It is recommended that the user,

for most applications, connect V+ pin to the most positive voltage potential (or

left open unused) and V- and N/C pins to the most negative voltage potential

in the system. All other pins must have voltages within these voltage limits.

M 2

M 1

M 4

M 3

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -3.50V +/- 0.05V

N/C*

• Nominal R

=0.0V of 540Ω

DS(ON) @ GS

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

PC, SC PACKAGES

ALD114935

• V

match (V ) — 20mV

GS(th)

• High input impedance — 10¹²Ω typical

• Positive, zero, and negative V

• DC current gain >10⁸

temperature coefficient

GS(th)

N/C*

• Low input and output leakage currents

M 1

M 2

ORDERING INFORMATION

Operating Temperature Range*

0°C to +70°C 0°C to +70°C

16-Pin

Plastic Dip

16-Pin

SOIC

8-Pin

Plastic Dip

8-Pin

SOIC

PA, SA PACKAGES

Package

*N/C pins are internally connected.

Connect to V- to reduce noise

ALD114835PC ALD114835SC ALD114935PA

ALD114935SA

* Contact factory for industrial temp. range or user-specified threshold voltage values

www.aldinc.com

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与ALD114835PC相关器件

型号	品牌	获取价格	描述	数据表
ALD114835PCL	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114835SC	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114835SCL	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114904	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904A	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904APA	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904APAL	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114904ASA	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD114904ASAL	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD114904PA	ALD	获取价格	QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY

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