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ALD114835PCL

更新时间: 2024-11-30 11:48:19
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描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

ALD114835PCL 数据手册

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TM  
ADVANCED  
LINEAR  
DEVICES, INC.  
®
e
EPAD  
A
ALD114835/ALD114935  
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®  
V
= -3.50V  
GS(th)  
PRECISION MATCHED PAIR MOSFET ARRAY  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode  
N-Channel MOSFETs matched at the factory usingALD’s proven EPAD CMOS  
technology. These devices are intended for low voltage, small signal applica-  
tions. They are excellent functional replacements for normally-closed relay ap-  
plications, as they are normally on (conducting) without any power applied, but  
could be turned off or modulated when system power supply is turned on. These  
MOSFETs have the unique characteristics of, when the gate is grounded, oper-  
ating in the resistance mode for low drain voltage levels and in the current  
source mode for higher voltage levels and providing a constant drain current.  
• Functional replacement of Form B (NC) relay  
• Zero power fail safe circuits  
• Backup battery circuits  
• Power failure detector  
• Fail safe signal detector  
• Source followers and buffers  
• Precision current mirrors  
• Precision current sources  
• Capacitives probes  
• Sensor interfaces  
• Charge detectors  
• Charge integrators  
• Differential amplifier input stage  
• High side switches  
• Peak detectors  
• Sample and Hold  
• Alarm systems  
• Current multipliers  
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-  
trical characteristics matching. As these devices are on the same monolithic  
chip, they also exhibit excellent temperature tracking characteristics. They are  
versatile as design components for a broad range of analog applications such  
as basic building blocks for current sources, differential amplifier input stages,  
transmission gates, and multiplexer applications. Besides matched pair electri-  
cal characteristics, each individual MOSFET also exhibits well controlled pa-  
rameters, enabling the user to depend on tight design limits. Even units from  
different batches and different date of manufacture have correspondingly well  
matched characteristics.  
• Analog switches  
• Analog multiplexers  
• Voltage comparators  
• Level shifters  
These depletion mode devices are built for minimum offset voltage and differ-  
ential thermal response, and they are designed for switching and amplifying  
applications in single 5V to +/-5V systems where low input bias current, low  
input capacitance and fast switching speed are desired. These devices exhibit  
well controlled turn-off and sub-threshold charactersitics and therefore can be  
used in designs that depend on sub-threshold characteristics.  
PIN CONFIGURATIONS  
ALD114835  
TheALD114835/ALD114935 are suitable for use in precision applications which  
require very high current gain, beta, such as current mirrors and current sources.  
A sample calculation of the DC current gain at a drain current of 3mA and gate  
input leakage current of 30pA = 100,000,000. It is recommended that the user,  
for most applications, connect the V+ pin to the most positive voltage and the  
V- and IC pins to the most negative voltage in the system. All other pins must  
have voltages within these voltage limits at all times.  
-
-
V
V
1
2
3
4
5
6
7
8
IC*  
G
16  
15  
14  
13  
12  
11  
10  
9
IC*  
G
N2  
N1  
M 2  
M 1  
D
V
S
D
S
N2  
N1  
+
+
V
12  
-
-
V
V
34  
FEATURES  
D
D
N3  
N4  
M 4  
M 3  
• Depletion mode (normally ON)  
• Precision Gate Threshold Voltages: -3.50V +/- 0.05V  
G
N4  
G
N3  
• Nominal R  
V
=0.0V of 540Ω  
DS(ON) @ GS  
IC*  
IC*  
-
-
V
V
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
SCL, PCL PACKAGES  
• V  
match (V ) — 20mV  
GS(th)  
OS  
ALD114935  
-
• High input impedance — 1012typical  
• Positive, zero, and negative V  
• DC current gain >108  
• Low input and output leakage currents  
temperature coefficient  
GS(th)  
-
V
V
1
2
3
4
8
7
6
5
IC*  
IC*  
G
G
N1  
N2  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
M 1  
M 2  
D
D
V
N1  
N2  
Operating Temperature Range*  
0°C to +70°C  
-
-
S
V
12  
0°C to +70°C  
16-Pin  
SOIC  
16-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
SAL, PAL PACKAGES  
Package  
*IC pins are internally connected,  
connect to V-  
ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL  
* Contact factory for industrial temp. range or user-specified threshold voltage values  
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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