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ALD114813SCL

更新时间: 2024-11-30 12:22:27
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描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

ALD114813SCL 数据手册

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TM  
ADVANCED  
LINEAR  
DEVICES, INC.  
®
e
EPAD  
A
ALD114813/ALD114913  
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®  
V
= -1.30V  
GS(th)  
PRECISION MATCHED PAIR MOSFET ARRAY  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode  
N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS  
technology. These devices are intended for low voltage, small signal applica-  
tions. They are excellent functional replacements for normally-closed relay appli-  
cations, as they are normally on (conducting) without any power applied, but  
could be turned off or modulated when system power supply is turned on. These  
MOSFETS have the unique characteristics of, when the gate is grounded, oper-  
ating in the resistance mode for low drain voltage levels and in the current source  
mode for higher voltage levels and providing a constant drain current.  
• Functional replacement of Form B (NC) relays  
• Ultra low power (nanowatt) analog and digital  
circuits  
• Ultra low operating voltage (<0.2V) analog and  
digital circuits  
• Sub-threshold biased and operated circuits  
• Zero power fail safe circuits in alarm systems  
• Backup battery circuits  
• Power failure and fail safe detector  
• Source followers and high impedance buffers  
• Precision current mirrors and current sources  
• Capacitives probes and sensor interfaces  
• Charge detectors and charge integrators  
• Differential amplifier input stage  
• High side switches  
These MOSFETS are designed for exceptional device electrical characteristics  
matching. As these devices are on the same monolithic chip, they also exhibit  
excellent temperature tracking characteristics. They are versatile as design com-  
ponents for a broad range of analog applications, and they are basic building  
blocks for current sources, differential amplifier input stages, transmission gates,  
and multiplexer applications. Besides matched pair electrical characteristics, each  
individual MOSFET also exhibits well controlled parameters, enabling the user to  
depend on tight design limits. Even units from different batches and different date  
of manufacture have correspondingly well matched characteristics.  
• Peak detectors and level shifters  
• Sample and Hold  
• Current multipliers  
• Discrete analog switches and multiplexers  
• Discrete voltage comparators  
These depletion mode devices are built for minimum offset voltage and differen-  
tial thermal response, and they are designed for switching and amplifying appli-  
cations in single 1.5V to +/-5V systems where low input bias current, low input  
capacitance and fast switching speed are desired. These devices exhibit well  
controlled turn-off and sub-threshold charactersitics and therefore can be used in  
designs that depend on sub-threshold characteristics.  
PIN CONFIGURATIONS  
ALD114813  
The ALD114813/ALD114913 are suitable for use in precision applications which  
require very high current gain, beta, such as current mirrors and current sources.  
A sample calculation of the DC current gain at a drain current of 3mA and gate  
input leakage current of 30pA = 100,000,000. It is recommended that the user, for  
most applications, connect the V+ pin to the most positive voltage and the V- and  
IC pins to the most negative voltage in the system. All other pins must have  
voltages within these voltage limits at all times.  
-
-
V
V
1
2
3
4
5
6
7
8
IC*  
G
16  
15  
14  
13  
12  
11  
10  
9
IC*  
G
N2  
N1  
M 2  
M 1  
D
V
S
D
S
N2  
N1  
+
+
V
12  
-
-
V
V
34  
FEATURES  
D
D
N4  
N3  
M 4  
M 3  
• Depletion mode (normally ON)  
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V  
G
N4  
G
N3  
• Nominal R  
@V =0.0V of 1.3KΩ  
DS(ON)  
GS  
IC*  
IC*  
-
-
V
V
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
SCL, PCL PACKAGES  
• V  
match (V ) — 20mV  
GS(th)  
OS  
ALD114913  
-
• High input impedance — 1012typical  
• Positive, zero, and negative V  
temperature coefficient  
-
GS(th)  
V
V
• DC current gain >108  
IC*  
G
1
2
3
4
8
7
6
5
IC*  
• Low input and output leakage currents  
G
N2  
N1  
M 1  
M 2  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
D
D
V
N1  
N2  
Operating Temperature Range*  
0°C to +70°C  
-
-
S
V
12  
0°C to +70°C  
16-Pin  
SOIC  
Package  
16-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
SAL, PAL PACKAGES  
*IC pins are internally connected,  
connect to V-  
ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL  
* Contact factory for industrial temp. range or user-specified threshold voltage values  
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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