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ALD114804SCL PDF预览

ALD114804SCL

更新时间: 2024-02-19 05:40:11
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描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

ALD114804SCL 技术参数

是否无铅: 含铅生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.58Base Number Matches:1

ALD114804SCL 数据手册

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TM  
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
®
e
EPAD  
A
ALD114804/ALD114804A/ALD114904/ALD114904A  
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®  
V
= -0.40V  
GS(th)  
PRECISION MATCHED PAIR MOSFET ARRAY  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD114804/ALD114804A/ALD114904/ALD114904Aare high precision monolithic  
quad/dual depletion mode N-Channel MOSFETS matched at the factory using  
ALD’s proven EPAD® CMOS technology. These devices are intended for low  
voltage, small signal applications. They are excellent functional replacements for  
normally-closed relay applications, as they are normally on (conducting) without  
any power applied, but could be turned off or modulated when system power  
supply is turned on. These MOSFETS have the unique characteristics of, when  
the gate is grounded, operating in the resistance mode for low drain voltage lev-  
els and in the current source mode for higher voltage levels and providing a  
constant drain current.  
• Functional replacement of Form B (NC) relays  
• Ultra low power (nanowatt) analog and digital  
circuits  
• Ultra low operating voltage (<0.2V) analog and  
digital circuits  
• Sub-threshold biased and operated circuits  
• Zero power fail safe circuits in alarm systems  
• Backup battery circuits  
• Power failure and fail safe detector  
• Source followers and high impedance buffers  
• Precision current mirrors and current sources  
• Capacitives probes and sensor interfaces  
• Charge detectors and charge integrators  
• Differential amplifier input stage  
• High side switches  
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for  
exceptional device electrical characteristics matching. As these devices are on  
the same monolithic chip, they also exhibit excellent temperature tracking char-  
acteristics. They are versatile as design components for a broad range of analog  
applications, such as basic building blocks for current sources, differential ampli-  
fier input stages, transmission gates, and multiplexer applications.  
• Peak detectors and level shifters  
• Sample and Hold  
• Current multipliers  
• Discrete analog switches and multiplexers  
• Discrete voltage comparators  
Besides matched pair electrical characteristics, each individual MOSFET also  
exhibits well controlled parameters, enabling the user to depend on tight design  
limits corresponding to well matched characteristics.  
These depletion mode devices are built for minimum offset voltage and differen-  
tial thermal response, and they are suitable for switching and amplifying applica-  
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems  
where low input bias current, low input capacitance and fast switching speed are  
desired. These devices exhibit well controlled turn-off and sub-threshold  
charactersitics and therefore can be used in designs that depend on sub-thresh-  
old characteristics.  
PIN CONFIGURATIONS  
ALD114804  
-
-
V
V
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in  
precision applications which require very high current gain, beta, such as current  
mirrors and current sources. A sample calculation of the DC current gain at a  
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is  
recommended that the user, for most applications, connect the V+ pin to the  
most positive voltage and the V- and IC pins to the most negative voltage in the  
system. All other pins must have voltages within these voltage limits at all times.  
1
2
3
4
5
6
7
8
IC*  
G
16  
15  
14  
13  
12  
11  
10  
9
IC*  
G
N2  
N1  
M 2  
M 1  
D
V
S
D
S
N2  
N1  
+
+
V
12  
-
-
V
V
34  
FEATURES  
D
N4  
D
N3  
M 4  
M 3  
• Depletion mode (normally ON)  
• Precision Gate Threshold Voltages: -0.40V +/- 0.02V  
G
G
N4  
N3  
• Nominal R  
V
=0.0V of 5.4KΩ  
DS(ON) @ GS  
IC*  
IC*  
-
-
V
V
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
SCL, PCL PACKAGES  
• V  
match (V ) — 20mV  
GS(th)  
OS  
ALD114904  
• High input impedance — 1012typical  
• Positive, zero, and negative V  
temperature coefficient  
-
GS(th)  
-
V
V
• DC current gain >108  
IC*  
G
1
2
3
4
8
7
6
5
IC*  
• Low input and output leakage currents  
G
N2  
N1  
M 1  
M 2  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
D
N1  
D
V
N2  
Operating Temperature Range*  
-
-
S
12  
V
0°C to +70°C  
0°C to +70°C  
16-Pin  
SOIC  
Package  
16-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
SAL, PAL PACKAGES  
*IC pins are internally connected,  
connect to V-  
ALD114804ASCL ALD114804APCL ALD114904ASAL ALD114904APAL  
ALD114804SCL ALD114804PCL ALD114904SAL ALD114904PAL  
* Contact factory for industrial temp. range or user-specified threshold voltage values  
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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