Datasheet > AG2103

AG2103

更新时间： 2024-11-07 01:05:43

品牌	Logo	应用领域
创瑞 - AITSEMI		栅极驱动双极性晶体管
页数	文件大小	规格书
15页	996K
描述
MOSFET/IGBT GATE DRIVER

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中文翻译

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数据手册

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AG2103 数据手册

AG2103

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET/IGBT GATE DRIVER

HALF-BRIDGE DRIVER

DESCRIPTION

FEATURES

The AG2103 is a high voltage, high speed power

MOSFET and IGBT driver based on P_SUB P_EPI

process. The floating channel driver can be used to

drive two N-channel power MOSFET or IGBT in a

half-bridge configuration which operates up to 600V.

Logic inputs are compatible with standard CMOS or

LSTTL output, down to 3.3V logic. The output drivers

feature a high pulse current buffer stage designed for

minimum driver cross-conduction. Propagation delays

are matched to simplify use in high frequency

applications.



Fully operational to +600V

3.3V logic compatible

dV/dt Immunity ±50V/nsec

Floating channel designed for bootstrap

operation



Gate drive supply range from 10V to 20V

UVLO for both channels

Output Source / Sink Current Capability 300mA

/600mA



-5V negative Vs ability

Matched propagation delay for both channels

Available in a SOP8 and DFN8(2x3) packages.

AG2103 is available in a SOP8 and DFN8(2x3)

packages.

ORDERING INFORMATION

APPLICATION



Small and medium- power motor driver

Power MOSFET or IGBT driver

Half-Bridge Power Converters

Full-Bridge Power Converters

Package Type

Part Number

AG2103M8R

SOP8

SPQ: 4,000pcs/Reel

AG2103M8VR

AG2103J8R

DFN8(2x3)

SPQ: 3,000pcs/Reel

AG2103J8VR

V: Halogen free Package

R: Tape & Reel

TYPICAL APPLICATION CIRCUIT

Note

AiT provides all RoHS products

REV1.0

- NOV 2017 RELEASED -

- 1 -

12 3 4 5 6 7...15

中文翻译

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