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AG2106 PDF预览

AG2106

更新时间: 2024-09-17 01:05:43
品牌 Logo 应用领域
创瑞 - AITSEMI 栅极驱动双极性晶体管
页数 文件大小 规格书
15页 997K
描述
MOSFET/IGBT GATE DRIVER

AG2106 数据手册

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AG2106  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HALF-BRIDGE DRIVER  
DESCRIPTION  
FEATURES  
The AG2106 is a high voltage, high speed power  
MOSFET and IGBT driver based on P_SUB P_EPI  
process. The floating channel driver can be used to  
drive two N-channel power MOSFET or IGBT in a  
half-bridge configuration which operates up to 600V.  
Logic inputs are compatible with standard CMOS or  
LSTTL output, down to 3.3V logic. The output drivers  
feature a high pulse current buffer stage designed for  
minimum driver cross-conduction. Propagation delays  
are matched to simplify use in high frequency  
applications.  
Fully operational to +600 V  
3.3V logic compatible  
dV/dt Immunity ±50V/nsec  
Floating channel designed for bootstrap  
operation  
Gate drive supply range from 10V to 20V  
UVLO for both channels  
Output Source / Sink Current Capability 400mA  
/ 800mA  
Cross Conduction Protection with 180ns  
Internal Fixed Dead Time  
-5V negative Vs ability  
AG2106 is available in a SOP8 and DFN8(2x3)  
packages.  
Matched propagation delay for both channels  
Available in a SOP8 and DFN8(2x3) packages.  
ORDERING INFORMATION  
APPLICATION  
Small and medium- power motor driver  
Power MOSFET or IGBT driver  
Lighting ballast  
Package Type  
Part Number  
AG2106M8R  
SOP8  
M8  
HalfBridge Power Converters  
Full-Bridge Power Converters  
SPQ: 4,000pcs/Reel  
AG2106M8VR  
AG2106J8R  
DFN8(2x3)  
J8  
SPQ: 3,000pcs/Reel  
AG2106J8VR  
TYPICAL APPLICATION CIRCUIT  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
REV1.0  
- NOV 2017 RELEASED -  
- 1 -  

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