Datasheet > AG2113M16R

AG2113M16R

更新时间： 2024-11-06 01:12:39

品牌	Logo	应用领域
创瑞 - AITSEMI		栅极驱动双极性晶体管
页数	文件大小	规格书
16页	888K
描述
MOSFET/IGBT GATE DRIVER

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中文翻译

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数据手册

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AG2113M16R 数据手册

AG2113

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET/IGBT GATE DRIVER

HIGH AND LOW SIDE DRIVER

DESCRIPTION

FEATURES

The AG2113 is a high voltage, high speed power

MOSFET and IGBT driver with independent high and

low side referenced output channels based on P_SUB

P_EPI process. The floating channel can be used to

drive an N-channel power MOSFET or IGBT in the

high side configuration which operates up to 600V.

Logic inputs are compatible with standard CMOS or

LSTTL output, down to 3.3V logic. The output drivers

feature a high pulse current buffer stage designed for

minimum driver cross-conduction. Propagation delays

are matched to simplify use in high frequency

applications.



Fully operational to +600V

3.3V logic compatible

Floating channel designed for bootstrap

operation



Gate drive supply range from 10V to 20V

UVLO for both channels

Output Source / Sink Current Capability 3.0A

/3.5A



Separate logic supply range from 5.0V to 20V

-6V negative Vs ability

Matched propagation delay for both channels

Available in a SOP16 package.

AG2113 is available in a SOP16 package.

ORDERING INFORMATION

APPLICATION



High and medium-power motor driver

Power MOSFET or IGBT driver

Lighting ballast

Package Type

Part Number

AG2113M16R

SOP16

(wide body)

M16

AG2113M16VR

SPQ: 1,500pcs/Reel

TYPICAL APPLICATION CIRCUIT

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

REV1.0

- NOV 2017 RELEASED -

- 1 -

12 3 4 5 6 7...16

中文翻译

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