Datasheet > AG2104M8R

AG2104M8R

更新时间： 2024-09-17 01:12:39

品牌	Logo	应用领域
创瑞 - AITSEMI		栅极驱动双极性晶体管
页数	文件大小	规格书
9页	557K
描述
MOSFET/IGBT GATE DRIVER

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中文翻译

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数据手册

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AG2104M8R 数据手册

AG2104

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET/IGBT GATE DRIVER

HALF-BRIDGE DRIVER

DESCRIPTION

FEATURES

The AG2104 is a high voltage, high speed power

MOSFET and IGBT driver based on P_SUB P_EPI

process. The floating channel driver can be used to

drive two N-channel power MOSFET or IGBT in a

half-bridge configuration which operates up to 600V.

Logic inputs are compatible with standard CMOS or

LSTTL output, down to 3.3V logic. The output drivers

feature a high pulse current buffer stage designed for

minimum driver cross conduction. Propagation delays

are matched to simplify use in high frequency

applications.



Fully operational to +600V

3.3V logic compatible

dV/dt Immunity ±50V/nsec

Floating channel designed for bootstrap

operation



Gate drive supply range from 10V to 20V

UVLO for low side channels

Output Source / Sink Current Capability 400mA

/650mA



Cross Conduction Protection with 520ns

Internal Fixed Dead Time



-10V negative Vs ability

AG2104 is available in a SOP8 package.

Matched propagation delay for both channels

Available in a SOP8 package.

ORDERING INFORMATION

APPLICATION



Small and medium- power motor driver

Power MOSFET or IGBT driver

Package Type

Part Number

AG2104M8R

AG2104M8VR

SOP8

SPQ: 4,000pcs/Reel

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

TYPICAL APPLICATION CIRCUIT

REV1.0

- NOV 2017 RELEASED -

- 1 -

12 3 4 5 6 7...9

中文翻译

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