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AG2104 PDF预览

AG2104

更新时间: 2024-11-07 01:12:39
品牌 Logo 应用领域
创瑞 - AITSEMI 栅极驱动双极性晶体管
页数 文件大小 规格书
9页 557K
描述
MOSFET/IGBT GATE DRIVER

AG2104 数据手册

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AG2104  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET/IGBT GATE DRIVER  
HALF-BRIDGE DRIVER  
DESCRIPTION  
FEATURES  
The AG2104 is a high voltage, high speed power  
MOSFET and IGBT driver based on P_SUB P_EPI  
process. The floating channel driver can be used to  
drive two N-channel power MOSFET or IGBT in a  
half-bridge configuration which operates up to 600V.  
Logic inputs are compatible with standard CMOS or  
LSTTL output, down to 3.3V logic. The output drivers  
feature a high pulse current buffer stage designed for  
minimum driver cross conduction. Propagation delays  
are matched to simplify use in high frequency  
applications.  
Fully operational to +600V  
3.3V logic compatible  
dV/dt Immunity ±50V/nsec  
Floating channel designed for bootstrap  
operation  
Gate drive supply range from 10V to 20V  
UVLO for low side channels  
Output Source / Sink Current Capability 400mA  
/650mA  
Cross Conduction Protection with 520ns  
Internal Fixed Dead Time  
-10V negative Vs ability  
AG2104 is available in a SOP8 package.  
Matched propagation delay for both channels  
Available in a SOP8 package.  
ORDERING INFORMATION  
APPLICATION  
Small and medium- power motor driver  
Power MOSFET or IGBT driver  
Package Type  
Part Number  
AG2104M8R  
AG2104M8VR  
SOP8  
M8  
SPQ: 4,000pcs/Reel  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
TYPICAL APPLICATION CIRCUIT  
REV1.0  
- NOV 2017 RELEASED -  
- 1 -  

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