81 GHz to 86 GHz, 1 W E-Band Power
Amplifier with Power Detector
Data Sheet
ADMV7810
FEATURES
GENERAL DESCRIPTION
Gain: 20 dB typical
The ADMV7810 is an integrated E-band gallium arsenide (GaAs),
pseudomorphic, high electron mobility transfer (pHEMT), mono-
lithic microwave integrated circuit (MMIC), medium power
amplifier with a temperature compensated on-chip power detector
that operates from 81 GHz to 86 GHz. The ADMV7810 provides
20 dB of gain, 28 dBm of output power at 1 dB compression, and
29 dBm of saturated output power at 18% power added efficiency
from a 4 V power supply. The ADMV7810 exhibits excellent
linearity and is optimized for E-band communications and high
capacity wireless backhaul radio systems. The amplifier configura-
tion and high gain make the device an excellent candidate for
last stage signal amplification before the antenna. All data is
taken with the chip in a 50 Ω test fixture connected via a 3 mil
wide × 0.5 mil thick × 7 mil long ribbon on each port. The
ADMV7810 is available in a 40-pad bare die (CHIP) and
operates over the −55°C to +85°C temperature range.
Output power for 1 dB compression: 28 dBm typical
Saturated output power: 29 dBm typical
Output third-order intercept: 33 dBm typical
Input return loss: 12 dB typical
Output return loss: 20 dB typical
DC supply: 4 V at 800 mA
No external matching required
Die size: 2.999 mm × 3.799 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
FUNCTIONAL BLOCK DIAGRAM
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ADMV7810
20
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RFOUT
3
RFIN
2
1
40
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Figure 1.
Rev. 0
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