50 GHz to 95 GHz, GaAs, pHEMT, MMIC,
Wideband Low Noise Amplifier
Data Sheet
ADL7003
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Gain: 14 dB typical
Noise figure: 5 dB typical
2
3
4
5
6
7
Input return loss (S11): 15 dB typical
Output return loss (S22): 20 dB typical
Output power for 1 dB compression (P1dB): 14 dBm typical
Saturated output power (PSAT): 18 dBm typical
Output third-order intercept (IP3): 21 dBm typical
Supply voltage: 3 V at 120 mA
RFOUT
8
50 Ω matched input/output
Die size: 1.9 mm × 1.9 mm × 0.05 mm
ADL7003
APPLICATIONS
RFIN
Test instrumentation
1
Military and space
Telecommunications infrastructure
14
13
12
11
10
9
Figure 1.
GENERAL DESCRIPTION
The ADL7003 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic
microwave integrated circuit (MMIC), balanced low noise
amplifier that operates from50GHzto 95 GHz. In the lower
band of 50GHz to 70 GHz, the ADL7003 provides 14 dB
(typical) of gain, 21 dBm output IP3, and 12dBm of output
power for 1 dB gain compression. In the upper band of 70 GHz
to 90 GHz, the ADL7003 provides 15 dB (typical) of gain,
21 dBm output IP3, and 14dBm of output powerfor1 dB gain
compression. The ADL7003 requires 120 mA from a 3 V supply.
The ADL7003 amplifier inputs/outputs areinternally matched
to 50Ω, facilitating integrationintomultichip modules (MCMs).
Alldata is taken withthe chipconnectedvia one 0.076 mm (3mil)
ribbon bond of 0.076 mm(3 mil)minimal length.
Rev. 0
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