Data Sheet
ADL8107
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Single positive supply (self biased)
► Gain: 24 dB typical at 7 GHz to 16 GHz
► OIP3: 29 dBm typical at 7 GHz to 16 GHz
► Noise figure: 1.3 dB typical at 7 GHz to 16 GHz
► 8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions
section)
Figure 1.
APPLICATIONS
► Test instrumentation
► Military communications
► Radar
GENERAL DESCRIPTION
The ADL8107 is a gallium arsenide (GaAs), monolithic micro-
wave IC (MMIC), pseudomorphic high electron mobility transistor
(pHEMT), low noise, wideband, high linearity amplifier that operates
from 6 GHz to 18 GHz.
The ADL8107 provides a typical gain of 24 dB at 7 GHz to
16 GHz, a 1.3 dB typical noise figure at 7 GHz to 16 GHz, a
18.5 dBm typical output power for 1 dB compression (OP1dB) at
7 GHz to 16 GHz, and a typical output third-order intercept (OIP3)
of 29 dBm at 7 GHz to 16 GHz, requiring only 90 mA from a 5 V
drain supply voltage. This low noise amplifier has a high output sec-
ond-order intercept (OIP2) of 30.5 dBm typical at 7 GHz to 16 GHz,
making the ADL8107 suitable for military and test instrumentation
applications.
The ADL8107 also features inputs and outputs that are internally
matched to 50 Ω. The RFIN and RFOUT pins are internally ac-cou-
pled, and the bias inductor is also integrated, making the ADL8107
ideal for surface-mounted technology (SMT)-based, high density
applications.
The ADL8107 is housed in a RoHS-compliant, 2 mm × 2 mm,
8-lead LFCSP.
Rev. 0
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