GaAs, HBT, MMIC, Low Phase Noise
Amplifier, 6 GHz to 14 GHz
Data Sheet
ADL8150
FEATURES
FUNCTIONAL BLOCK DIAGRAM
OP1dB: 18 dBm (typical at 7 GHz to 12 GHz)
1
6
GND
RF
IN
PSAT: 22 dBm (typical at 7 GHz to 12 GHz)
NC 2
5 NC
Gain: 12 dB (typical at 7 GHz to 12 GHz)
OIP3: 30 dBm typical
3
4
GND
RF
/V
OUT CC
Figure 1.
Phase noise: −172 dBc/Hz at 10 kHz offset
Supply voltage: 5 V at 74 mA
6-lead, 2 mm × 2 mm LFCSP
APPLICATIONS
Military and space
Test instrumentation
Communications
GENERAL DESCRIPTION
The ADL8150 is a self biased gallium arsenide (GaAs),
supply voltage. The ADL8150 also features inputs and outputs
(I/Os) that are internally matched to 50 Ω, and facilitates
integration into multichip modules (MCMs).
monolithic microwave integrated circuit (MMIC), heterojunction
bipolar transistor (HBT), low phase noise amplifier that operates
from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical
signal gain, 18 dBm output power at 1 dB gain compression
(OP1dB), and a typical output third-order intercept (OIP3) of
30 dBm. The amplifier requires 74 mA from a 5 V collector
Note that throughout this data sheet, multifunction pins, such
as RFOUT/VCC, are referred to either by the entire pin name or by
a single function of the pin, for example, RFOUT, when only that
function is relevant.
Rev. 0
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