Datasheet > ADL9006ACGZN

ADL9006ACGZN

更新时间： 2024-11-15 02:51:27

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
14页	397K
描述
2 GHz to 28 GHz, GaAs, pHEMT, MMIC Low Noise Amplifier

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ADL9006ACGZN 数据手册

2 GHz to 28 GHz, GaAs,

pHEMT, MMIC Low Noise Amplifier

Data Sheet

ADL9006

FEATURES

FUNCTIONAL BLOCK DIAGRAM

P1dB: 20 dBm typical at 2 GHz to 6 GHz

_SAT: 20.5 dBm typical at 2 GHz to 6 GHz

Gain: 15.5 dB typical at 6 GHz to 28 GHz

Noise figure: 2.5 dB typical at 2 GHz to 20 GHz

OIP3: 26 dBm typical at 2 GHz to 6 GHz

Supply voltage: 5 V at 53 mA

GND

24 GND

23 NIC

22 GND

GND

RFIN

RFOUT

GND

NIC

GND

NIC

50 Ω matched input and output

ADL9006

18 NIC

GND

APPLICATIONS

Test instrumentation

Military and space

PACKAGE

BASE

Local oscillator driver amp

Figure 1.

GENERAL DESCRIPTION

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic microwave

integrated circuit (MMIC), low noise amplifier that operates

between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of

gain, 2.5 dB noise figure, 26 dBm output third-order intercept

(OIP3), and 20 dBm of output power for 1 dB compression

(P1dB) while requiring 53 mA from a 5 V supply. The ADL9006

is self biased with only a single positive supply needed to

achieve a supply current (I_DD) of 53 mA.

The ADL9006 amplifier input and output are internally

matched to 50 Ω.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

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